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t ga 2958 13 to 18 ghz 2w gan driver amplifier preliminary datasheet: 12 - 18 - 14 - 1 of 13 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com applications ? s atellite communications ? data links ? radar ? general purpose general description triquints tga2 958 is a driver amplif ier fabricated on triquints tqgan15 gan on sic process . the tga2 958 operates from 13 C 18 ghz and achieves 2 w of saturated output power with > 21 db of large signal gain and at least 25 % power - added efficiency . the TGA2958 is an ideal choice to drive triquints high performing ku - band gan hpas allowing the user to operate the driver and hpa off similar voltage rails. fully matched to 50 ohms with integrated dc blocking capacitors on both i/o ports, the TGA2958 is ideally suited for a variety of military and commercial radar and communications applications. lead free and rohs compliant. evaluation boards are available upon request. functional block diagram p ad configuration p ad no. symbol 1 rf in 2 v g1 3 v g2 4 v g3 5 v d 6 rf out product features ? frequency range: 13 - 18 ghz ? p sa t: > 3 3 dbm at p in = 12 dbm ? pae: > 2 5 % at pin = 12 dbm ? small signal gain: > 2 5 db ? input return loss: > 7 db ? output return loss: > 8 db ? bias: v d = 20 v, i dq = 7 0 ma , v g = - 2. 7 v typical ? chip dimensions: 1.25 x 2.14 x 0.10 mm ? performance under cw operation ordering information part eccn description tg a2 958 ear99 13 - 18 ghz 2 w gan driver amplifier 1 2 3 4 5 6
t ga 2958 13 to 18 ghz 2w gan driver amplifier preliminary datasheet: 12 - 18 - 14 - 2 of 13 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com absolute maximum ratings parameter value drain voltage (v d ) 23 v gate voltage range (v g ) - 5 to 0 v drain current C common drain - 1 st stage (i d1 ) - 2 nd stage (i d2 ) - 3 rd stage (i d3 ) 576 ma 72 m a 192 m a 384 ma gate current at tch = 200 c : - 1 st stage (i g1 ) - 2 nd stage (i g2 ) - 3 rd stage (i g3 ) - 0.2 to 1.2 ma - 0.4 to 2 . 4 ma - 0.8 to 2.4 ma power dissipation ( p diss ) , 85c 13 w input power (p in ) , cw, 50 , v d = 22 v, i dq = 70 ma , 85 c 27 dbm input power (p in ) , cw, vswr 3:1 , v d = 22 v, i dq = 70 ma, 85 c 20 dbm channel temp erature (t ch ) 275 c mounting temperature (30 seconds) 320 c storage temperature - 55 t o 150 c operation of this device outside the parameter ranges given above may cause permanent damage. these are stress ratings only, and functional operation of the device at these conditions is not implied. recommended operating conditions parameter value drain voltage ( v d ) cw 2 0 v drain current ( i dq ) 7 0 ma drain current under rf drive (i d_drive ) see plots p. 7 gate voltage (v g ) ? 2. 7 v (typ.) gate current under rf drive (i g_drive ) see plots p. 7 temperature (t base ) - 40 to 85 c electrical specifications are measured at specified test conditions. specifications are not guaranteed over all recommended operating conditions. electrical specifications test conditions unless otherwise noted : 25 c, v d = 20 v, i dq = 70 ma, v g = ?2.7 v typ, cw. parameter min typical max units operational frequency range 13 18 ghz small signal gain > 2 5 db input return loss > 7 db output return loss > 8 db output power at pin = 12 dbm > 33 dbm power added efficiency at pin = 12 dbm > 25 % large signal gain at pin = 12 dbm > 21 db im3 (pout/tone = 24 dbm , 1 m hz spacing) - 27 dbc im5 (pout/tone = 24 dbm , 1 m h z spacing) - 33 dbc small signal gain temperature coefficient - 0.07 db/ c output power temperature coefficient - at pin = 0 dbm - at pin = 12 dbm - 0.06 - 0.01 dbm/ c recommended operating voltage 20 22 v
t ga 2958 13 to 18 ghz 2w gan driver amplifier preliminary datasheet: 12 - 18 - 14 - 3 of 13 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com thermal and reliability information parameter test conditions value units thermal resistance ( jc ) (1) t base = 85 c, v d = 20 v (cw) at i dq = 70 ma, p diss = 1.4 w 1 2.9 c /w channel temperature (t ch ) ( quiescent ) 1 03 c median lifetime (t m ) 1.8 x 10^1 5 hrs thermal resistance ( jc ) (1) t base = 85 c, v d = 20 v (cw) at freq = 17 ghz, i dq = 70 ma, p out = 27 dbm, p diss = 3.2 w 15.6 c /w channel temperature (t ch ) (under rf drive) 135 c median lifetime (t m ) 8.3 x 10^1 2 hrs thermal resistance ( jc ) (1) t base = 85 c, v d = 20 v (cw) at freq = 17 ghz, i dq = 70 ma, p out = 3 3 .5 dbm, p diss = 7.9 w 14.8 c /w channel temperature (t ch ) (under rf drive) 202 c median lifetime (t m ) 1.2 x 10^ 09 hrs notes: 1. thermal resist ance measured to back of ca rrier plate. mmic mounted on a 4 0 mil cumo carrier using 1.5 mil 80/20 ausn. test conditions: v d = 22 v; failure criteria = 10% reduction in i d_max 2 3 4 5 6 7 8 12 13 14 15 16 17 18 19 p diss (w) frequency (ghz) dissipated power vs. freq. vs. temp. temp = 25 c pin = 12 dbm, cw 25 c 85 c - 40 c 1e+04 1e+05 1e+06 1e+07 1e+08 1e+09 1e+10 1e+11 1e+12 1e+13 1e+14 1e+15 1e+16 1e+17 1e+18 75 100 125 150 175 200 225 250 275 median lifetime, t m (hours) channel temperature, t ch ( ? c) median lifetime vs. channel temperature fet 16
t ga 2958 13 to 18 ghz 2w gan driver amplifier preliminary datasheet: 12 - 18 - 14 - 4 of 13 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com typical performance : small signal condition s unless otherwise specified : v d = 20 v, i dq = 70 ma, v g = ?2.7 v typ, cw. 20 22 24 26 28 30 12 13 14 15 16 17 18 19 s21 (db) frequency (ghz) gain vs. frequency vs. drain voltage temp = 25 c 22 v 20 v 18 v 16 v 20 22 24 26 28 30 32 12 13 14 15 16 17 18 19 s21 (db) frequency (ghz) gain vs. frequency vs. drain current temp = 25 c 90 ma 70 ma 50 ma 10 15 20 25 30 35 40 12 13 14 15 16 17 18 19 s21 (db) frequency (ghz) gain vs. frequency vs. temperature - 40 c 25 c 85 c -30 -25 -20 -15 -10 -5 0 12 13 14 15 16 17 18 19 s11 (db) frequency (ghz) irl vs. frequency vs. temperature - 40 c 25 c 85 c -30 -25 -20 -15 -10 -5 0 12 13 14 15 16 17 18 19 s22 (db) frequency (ghz) orl vs. frequency vs. temperature - 40 c 25 c 85 c
t ga 2958 13 to 18 ghz 2w gan driver amplifier preliminary datasheet: 12 - 18 - 14 - 5 of 13 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com typical performance : large signal condition s unless otherwise specified : v d = 20 v, i dq = 70 ma, v g = ?2.7 v typ, cw . 30 31 32 33 34 35 12 13 14 15 16 17 18 19 output power (dbm) frequency (ghz) output power vs. frequency vs. v d temp = 25 c, pin = 12 dbm 20 v 22 v 18 v 16 v 25 26 27 28 29 30 31 32 33 34 35 12 13 14 15 16 17 18 19 output power (dbm) frequency (ghz) output power vs. frequency vs. p in temp = 25 c 12 dbm 15 dbm 6 dbm 0 dbm 30 31 32 33 34 35 12 13 14 15 16 17 18 19 output power (dbm) frequency (ghz) output power vs. frequency vs. temp. p in = 12 dbm 25 c 85 c - 40 c 15 20 25 30 35 40 12 13 14 15 16 17 18 19 power added efficiency (%) frequency (ghz) pae vs. frequency vs. v d temp = 25 c, pin = 12 dbm 20 v 22 v 18 v 16 v 10 15 20 25 30 35 40 12 13 14 15 16 17 18 19 power added efficiency (%) frequency (ghz) pae vs. frequency vs. p in temp = 25 c 12 dbm 15 dbm 6 dbm 0 dbm 15 20 25 30 35 40 12 13 14 15 16 17 18 19 power added efficieny (%) frequency (ghz) pae vs. frequency vs. temp. p in = 12 dbm 25 c 85 c - 40 c
t ga 2958 13 to 18 ghz 2w gan driver amplifier preliminary datasheet: 12 - 18 - 14 - 6 of 13 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com typical performance : large signal condition s unless otherwise specified : v d = 20 v, i dq = 70 ma, v g = ?2.7 v typ, cw . 18 19 20 21 22 23 12 13 14 15 16 17 18 19 gain (db) frequency (ghz) power gain vs. frequency vs. v d temp = 25 c, pin = 12 dbm 20 v 22 v 18 v 16 v 21 23 25 27 29 31 33 35 -5 -1 3 7 11 15 output power (dbm) input power (dbm) output power vs. input power vs. freq. temp = 25 c 14 ghz 16 ghz 13 ghz 17 ghz 15 ghz 18 ghz 30 31 32 33 34 35 12 13 14 15 16 17 18 19 output power (dbm) frequency (ghz) output power vs. freq. vs. drain current temp = 25 c, p in = 12 dbm 70 ma 90 ma 50 ma 30 ma 120 ma 150 ma 15 20 25 30 35 40 12 13 14 15 16 17 18 19 power added efficiency (%) frequency (ghz) pae vs. freq. vs. drain current temp = 25 c, p in = 12 dbm 70 ma 90 ma 50 ma 30 ma 120 ma 150 ma 16 18 20 22 24 26 28 30 32 34 -5 -1 3 7 11 15 gain (db) input power (dbm) power gain vs. input power vs. freq. temp = 25 c 14 ghz 16 ghz 13 ghz 17 ghz 15 ghz 18 ghz 0 5 10 15 20 25 30 35 40 -5 -1 3 7 11 15 power added efficiency (%) input power (dbm) pae vs. input power vs. freq. temp = 25 c 14 ghz 16 ghz 13 ghz 17 ghz 15 ghz 18 ghz
t ga 2958 13 to 18 ghz 2w gan driver amplifier preliminary datasheet: 12 - 18 - 14 - 7 of 13 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com typical performance: large signal condition s unless otherwise specified : v d = 20 v, i dq = 70 ma, v g = ?2.7 v typ, cw . 250 300 350 400 450 500 12 13 14 15 16 17 18 19 drain current (ma) frequency (ghz) drain current vs. frequency vs. temp. p in = 12 dbm 25 c 85 c - 40 c 0 2 4 6 8 10 12 14 12 13 14 15 16 17 18 19 gate current (ma) frequency (ghz) gate current vs. frequency vs. temp. p in = 12 dbm 25 c 85 c - 40 c 100 150 200 250 300 350 400 450 500 -5 -1 3 7 11 15 drain current (ma) input power (dbm) drain current vs. input power vs. freq. temp = 25 c 14 ghz 16 ghz 13 ghz 17 ghz 15 ghz 18 ghz 0 1 2 3 4 5 6 -5 -1 3 7 11 15 gate current (ma) input power (dbm) gate current vs. input power vs. freq. temp = 25 c 14 ghz 16 ghz 13 ghz 17 ghz 15 ghz 18 ghz 0 1 2 3 4 5 6 12 13 14 15 16 17 18 19 gate current (ma) frequency (ghz) gate current vs. frequency vs. p in temp = 25 c 12 dbm 15 dbm 14 dbm 13 dbm 250 300 350 400 450 500 12 13 14 15 16 17 18 19 drain current (ma) frequency (ghz) drain current vs. frequency vs. p in temp = 25 c 12 dbm 15 dbm 14 dbm 13 dbm
t ga 2958 13 to 18 ghz 2w gan driver amplifier preliminary datasheet: 12 - 18 - 14 - 8 of 13 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com typical performance: l inearity condition s unless otherwise specified : v d = 20 v, i dq = 70 ma, v g = ?2.7 v typ, cw . -45 -40 -35 -30 -25 -20 -15 -10 10 12 14 16 18 20 22 24 26 28 30 im3 (dbc) output power per tone (dbm) im3 vs. output power vs. frequency 1 mhz tone spacing, temp = 25 c 15.5 ghz 18 ghz 13 ghz -55 -50 -45 -40 -35 -30 -25 -20 10 12 14 16 18 20 22 24 26 28 30 im5 (dbc) output power per tone (dbm) im5 vs. output power vs. frequency 1 mhz tone spacing, temp = 25 c 15.5 ghz 18 ghz 13 ghz -80 -70 -60 -50 -40 -30 -20 10 15 20 25 30 35 2f 0 output power (dbc) fundamental output power (dbm) 2 nd harmonic vs. output power vs. freq. temp = 25 c 15.5 ghz 18 ghz 13 ghz -80 -70 -60 -50 -40 -30 -20 10 15 20 25 30 35 2f 0 output power (dbc) fundamental output power (dbm) 2 nd harmonic vs. output power vs. temp. freq = 15.5 ghz 25 c 85 c - 40 c
t ga 2958 13 to 18 ghz 2w gan driver amplifier preliminary datasheet: 12 - 18 - 14 - 9 of 13 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com application circuit bias - up procedure 1 . set i d limit to 500 m a, i g limit to 13 ma 2. apply ?5 v to v g 3. apply +2 0 v to v d ; ensure i dq is approx. 0 ma 4. adjust v g until i dq = 7 0 m a (v g ~ ? 2. 7 v typ.) . 5. turn on rf signal generator bias - down procedure 1. turn off rf signal generator 2. reduce v g to ?5 v; e nsure i dq is approx. 0 ma 3 . set v d to 0 v 4 . turn off v d supply 5. turn off v g supply v g3 r2 5 ohms c2 10 f v d r1 5 ohms c1 10 f v g1&2 rf in rf out r3 5 ohms c3 10 f c6 0.01 m f v g c4 0.01 m f v g1 v g2 c5 0.01 m f
t ga 2958 13 to 18 ghz 2w gan driver amplifier preliminary datasheet: 12 - 18 - 14 - 10 of 13 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com assembly drawing mmic bonding detail: bill of material reference des. value description manuf. part number c1, c2, c3 10 f cap, 1206, 50v, 20%, x5r various c4, c5, c6 0.01 f cap, 0402, 50v, 10%, x7r various r1, r2, r3 5.1 ohms res, 0402, 5% various v g3 v g1&2 rf_in rf_out v d gnd gnd gnd v g1 v g2 v g3 v d
t ga 2958 13 to 18 ghz 2w gan driver amplifier preliminary datasheet: 12 - 18 - 14 - 11 of 13 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com mechanical information units: millimeters thickness: 0.10 die x,y size tolerance: 0.050 ground is backside of die pad description p ad n o. symbol description 1 rf in input; matched to 50 ; dc blocked 2 v g1 (1) , (2) gate voltage; bias network is required; see recommended application information on page 9 . 3 v g2 (1) , (2) gate voltage; bias network is required; see recommended application information o n page 9 . 4 v g3 (2) gate voltage; bias network is required; see recommended application information o n page 9 . 5 v d drain voltage; bias network is required; see recommended application information p age 9 . 6 rf out output; matched to 50 ; dc blocked notes: 1. pads 2 & 3 are tied together off - chip. 2. pads 2,3, & 4 may be tied together for biasing
t ga 2958 13 to 18 ghz 2w gan driver amplifier preliminary datasheet: 12 - 18 - 14 - 12 of 13 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com assembly notes component placement and adhesive attachment assembly notes: ? vacuum pencils and/or vacuum collets are the preferred method of pick up. ? air bridges must be avoided during placement. ? the force impact is critical during auto placement. ? organic attachment (i.e. epoxy) can be used in low - power applications. ? curing should be done in a convection oven; proper exhaust is a safety concern. reflow process assembly notes: ? use ausn (80/20) solder and limit exposure to temperatures above 300 ? c to 3 - 4 minutes, maximum. ? an alloy station or conv eyor furnace with reducing atmosphere should be used. ? do not use any kind of flux. ? coefficient of thermal expansion matching is critical for long - term reliability. ? devices must be stored in a dry nitrogen atmosphere. interconnect process assembly notes: ? t hermosonic ball bonding is the preferred interconnect technique. ? force, time, and ultrasonic are critical parameters. ? aluminum wire should not be used. ? devices with small pad sizes should be bonded with 0.0007 - inch wire.
t ga 2958 13 to 18 ghz 2w gan driver amplifier preliminary datasheet: 12 - 18 - 14 - 13 of 13 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com product compliance information esd sensitivity ratings caution! esd - sensitive device esd rating: tbd value: tbd test: human body model (hbm) standard: jedec standard jesd22 - a114 solderability use ausn (80/2 0) solder and limit exposure to temperatures above 300 ? roh s compliance this part is compliant with eu 2002/95/ec rohs directive (restrictions on the use of certain hazardous substances in electrical and electronic equipment). this product also has the following attributes: ? ? ? ? 15 h 12 br 4 0 2 ) free ? ? eccn us department of commerce : ear99 contact information for the latest specifications, additional product information, worldwide sales and distribution locations, and information about triquint: web: www.triquint.com tel: +1. 972 . 994 . 8465 email: info - sales@triquint.com fax: +1. 972 . 994 . 8504 for technical questions and application information: email: info - products@triquint.com important notice the information contained herein is believed to be reliable. triquint makes no warranties regarding the information contained herein. triquint assumes no responsibility or liability whatsoever for any of the information contained herein. triquint assume s no responsibility or liability whatsoever for the use of the information contained herein. the information contained herein is provided "as is, where is" and with all faults, and the entire risk associated with such information is entirely with the user . all information contained herein is subject to change without notice. customers should obtain and verify the latest relevant information before placing orders for triquint products. the information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anything described by such information. triquint products are not warranted or aut horized for use as critical components in medical, life - saving, or life - sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal injury or death.

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